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- Hlutanúmer:
- BSB012NE2LX
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 170A WDSON-2.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Díóða - Zener - Fylki, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - stakir, Transistors - JFETs and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSB012NE2LX electronic components. BSB012NE2LX can be shipped within 24 hours after order. If you have any demands for BSB012NE2LX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB012NE2LX Vörueiginleikar
Hlutanúmer :
BSB012NE2LX
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 170A WDSON-2
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
37A (Ta), 170A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
67nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4900pF @ 12V
FET lögun :
-
Dreifing orku (Max) :
2.8W (Ta), 57W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
MG-WDSON-2, CanPAK M™
Pakki / mál :
3-WDSON
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