IPG16N10S4L61AATMA1 Verðlagning (USD) [228629stk lager]
- 1 pcs$0.16178
- 5,000 pcs$0.14842
- Hlutanúmer:
- IPG16N10S4L61AATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 8TDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Single and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPG16N10S4L61AATMA1 electronic components. IPG16N10S4L61AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG16N10S4L61AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG16N10S4L61AATMA1 Vörueiginleikar
Hlutanúmer :
IPG16N10S4L61AATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 8TDSON
Röð :
Automotive, AEC-Q101, OptiMOS™
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
16A
Rds On (Max) @ Id, Vgs :
61 mOhm @ 16A, 10V
Vgs (th) (Max) @ kt :
2.1V @ 90µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
845pF @ 25V
Afl - Max :
29W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
PG-TDSON-8-10
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