Vishay Semiconductor Diodes Division - NSB8BT-E3/81

KEY Part #: K6437757

NSB8BT-E3/81 Verðlagning (USD) [143207stk lager]

  • 1 pcs$0.25828
  • 800 pcs$0.24191

Hlutanúmer:
NSB8BT-E3/81
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 100V 8A TO263AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Thyristors - SCRs - mát, Kerfisstjóratæki and Díóða - breytileg getu ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division NSB8BT-E3/81 electronic components. NSB8BT-E3/81 can be shipped within 24 hours after order. If you have any demands for NSB8BT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8BT-E3/81 Vörueiginleikar

Hlutanúmer : NSB8BT-E3/81
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 100V 8A TO263AB
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 8A
Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 8A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : -
Núverandi - Aftur leki @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB
Rekstrarhiti - mótum : -55°C ~ 150°C

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