ITT Cannon, LLC - 120220-0161

KEY Part #: K7359522

120220-0161 Verðlagning (USD) [730635stk lager]

  • 1 pcs$0.05062
  • 6,000 pcs$0.04746
  • 12,000 pcs$0.04271
  • 30,000 pcs$0.04208
  • 60,000 pcs$0.04113

Hlutanúmer:
120220-0161
Framleiðandi:
ITT Cannon, LLC
Nákvæm lýsing:
UNIVERSAL CONTACT 2.5MM SMD. Battery Contacts
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: RFID transponders, tags, RFI og EMI - Tengiliðir, fingrafur og þéttingar, Framhlið RF (LNA + PA), RF rofa, RFID fylgihlutir, RF senditæki, RF mismunandi ICs og mát and RF tvíhliða ...
Samkeppnisforskot:
We specialize in ITT Cannon, LLC 120220-0161 electronic components. 120220-0161 can be shipped within 24 hours after order. If you have any demands for 120220-0161, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

120220-0161 Vörueiginleikar

Hlutanúmer : 120220-0161
Framleiðandi : ITT Cannon, LLC
Lýsing : UNIVERSAL CONTACT 2.5MM SMD
Röð : -
Hluti staða : Active
Tegund : Shield Finger, Pre-Loaded
Form : -
Breidd : 0.043" (1.10mm)
Lengd : 0.192" (4.87mm)
Hæð : 0.098" (2.50mm)
Efni : Beryllium Copper
Málun : Gold
Málun - þykkt : 5.906µin (0.15µm)
Viðhengisaðferð : Solder
Vinnuhitastig : -

Þú gætir líka haft áhuga á
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.