GeneSiC Semiconductor - MURTA600120

KEY Part #: K6468639

MURTA600120 Verðlagning (USD) [671stk lager]

  • 1 pcs$69.19588
  • 18 pcs$38.91334

Hlutanúmer:
MURTA600120
Framleiðandi:
GeneSiC Semiconductor
Nákvæm lýsing:
DIODE GEN 1.2KV 300A 3 TOWER. Rectifiers 1200V 600A Si Super Fast Recovery
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Thyristors - DIACs, SIDACs, Transistors - Forritanleg sameining, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki and Transistors - JFETs ...
Samkeppnisforskot:
We specialize in GeneSiC Semiconductor MURTA600120 electronic components. MURTA600120 can be shipped within 24 hours after order. If you have any demands for MURTA600120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURTA600120 Vörueiginleikar

Hlutanúmer : MURTA600120
Framleiðandi : GeneSiC Semiconductor
Lýsing : DIODE GEN 1.2KV 300A 3 TOWER
Röð : -
Hluti staða : Active
Uppsetning díóða : 1 Pair Common Cathode
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 1200V
Núverandi - Meðaltal leiðrétt (Io) (á hverja díóða) : 300A
Spenna - Fram (Vf) (Max) @ Ef : 2.6V @ 300A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : -
Núverandi - Aftur leki @ Vr : 25µA @ 1200V
Rekstrarhiti - mótum : -55°C ~ 150°C
Festingargerð : Chassis Mount
Pakki / mál : Three Tower
Birgir tæki pakki : Three Tower
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