[1951stk lager]
- Hlutanúmer:
- IRFR812PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 500V 3.6A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Smára - tvíhverfa (BJT) - fylki, Díóða - RF, Díóða - Zener - Stakur, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFR812PBF electronic components. IRFR812PBF can be shipped within 24 hours after order. If you have any demands for IRFR812PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR812PBF Vörueiginleikar
Hlutanúmer :
IRFR812PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 500V 3.6A DPAK
Röð :
HEXFET®
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
810pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
78W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D-Pak
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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