Vishay Semiconductor Diodes Division - BYG10J-E3/TR3

KEY Part #: K6439649

BYG10J-E3/TR3 Verðlagning (USD) [843370stk lager]

  • 1 pcs$0.04386
  • 7,500 pcs$0.03996

Hlutanúmer:
BYG10J-E3/TR3
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE AVALANCHE 600V 1.5A. Rectifiers 1.5 Amp 600 Volt
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs, Díóða - Bríta leiðréttingar, Thyristors - TRIACs, Díóða - leiðréttingar - stakir, Thyristors - SCR and Transistors - JFETs ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division BYG10J-E3/TR3 electronic components. BYG10J-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG10J-E3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10J-E3/TR3 Vörueiginleikar

Hlutanúmer : BYG10J-E3/TR3
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE AVALANCHE 600V 1.5A
Röð : -
Hluti staða : Active
Díóða gerð : Avalanche
Spenna - DC snúningur (Vr) (Max) : 600V
Núverandi - meðaltal leiðrétt (Io) : 1.5A
Spenna - Fram (Vf) (Max) @ Ef : 1.15V @ 1.5A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : 4µs
Núverandi - Aftur leki @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : DO-214AC, SMA
Birgir tæki pakki : DO-214AC (SMA)
Rekstrarhiti - mótum : -55°C ~ 150°C

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