IXTP8N65X2M Verðlagning (USD) [50552stk lager]
- 1 pcs$0.85509
- 50 pcs$0.85083
- Hlutanúmer:
- IXTP8N65X2M
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 650V 4A X2 TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Díóða - Zener - Stakur and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in IXYS IXTP8N65X2M electronic components. IXTP8N65X2M can be shipped within 24 hours after order. If you have any demands for IXTP8N65X2M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP8N65X2M Vörueiginleikar
Hlutanúmer :
IXTP8N65X2M
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 650V 4A X2 TO-220
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
550 mOhm @ 4A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
800pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
32W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220
Pakki / mál :
TO-220-3
Nýjustu fréttir
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