Murata Electronics North America - NFM18PS105R0J3D

KEY Part #: K7359537

NFM18PS105R0J3D Verðlagning (USD) [1294413stk lager]

  • 1 pcs$0.02872
  • 4,000 pcs$0.02857
  • 8,000 pcs$0.02689
  • 12,000 pcs$0.02521
  • 28,000 pcs$0.02353

Hlutanúmer:
NFM18PS105R0J3D
Framleiðandi:
Murata Electronics North America
Nákvæm lýsing:
CAP FEEDTHRU 1UF 20 6.3V 0603. Feed Through Capacitors 0603 1.0uF
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Helical Filters, Fæða í gegnum þétta, Monolithic kristallar, Algengur kæfa, SAW síur, Ferritkjarnar - Kaplar og raflögn, Keramik síur and Raflínusíur ...
Samkeppnisforskot:
We specialize in Murata Electronics North America NFM18PS105R0J3D electronic components. NFM18PS105R0J3D can be shipped within 24 hours after order. If you have any demands for NFM18PS105R0J3D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NFM18PS105R0J3D Vörueiginleikar

Hlutanúmer : NFM18PS105R0J3D
Framleiðandi : Murata Electronics North America
Lýsing : CAP FEEDTHRU 1UF 20 6.3V 0603
Röð : EMIFIL®, NFM18
Hluti staða : Active
Þolinmæði : 1µF
Umburðarlyndi : ±20%
Spenna - hlutfall : 6.3V
Núverandi : 2A
DC Resistance (DCR) (Max) : 30 mOhm
Vinnuhitastig : -55°C ~ 105°C
Innsetningartap : -
Hitastigstuðull : -
Einkunnir : -
Festingargerð : Surface Mount
Pakki / mál : 0603 (1608 Metric), 3 PC Pad
Stærð / vídd : 0.063" L x 0.032" W (1.60mm x 0.80mm)
Hæð (Max) : 0.028" (0.70mm)
Stærð þráðar : -

Þú gætir líka haft áhuga á
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.