Vishay Semiconductor Diodes Division - S3MHE3/9AT

KEY Part #: K6446885

[1613stk lager]


    Hlutanúmer:
    S3MHE3/9AT
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 1KV 3A DO214AB.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - JFETs, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - fylki and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division S3MHE3/9AT electronic components. S3MHE3/9AT can be shipped within 24 hours after order. If you have any demands for S3MHE3/9AT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    S3MHE3/9AT Vörueiginleikar

    Hlutanúmer : S3MHE3/9AT
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 1KV 3A DO214AB
    Röð : -
    Hluti staða : Obsolete
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 1000V
    Núverandi - meðaltal leiðrétt (Io) : 3A
    Spenna - Fram (Vf) (Max) @ Ef : 1.15V @ 2.5A
    Hraði : Standard Recovery >500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 2.5µs
    Núverandi - Aftur leki @ Vr : 10µA @ 1000V
    Capacitance @ Vr, F : 60pF @ 4V, 1MHz
    Festingargerð : Surface Mount
    Pakki / mál : DO-214AB, SMC
    Birgir tæki pakki : DO-214AB (SMC)
    Rekstrarhiti - mótum : -55°C ~ 150°C

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