NGTD17R120F2WP Verðlagning (USD) [78128stk lager]
- 1 pcs$0.50047
- 527 pcs$0.43791
- Hlutanúmer:
- NGTD17R120F2WP
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- DIODE GEN PURP 1.2KV DIE.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Single, Transistors - JFETs, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - RF, Transistors - Forritanleg sameining and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor NGTD17R120F2WP electronic components. NGTD17R120F2WP can be shipped within 24 hours after order. If you have any demands for NGTD17R120F2WP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTD17R120F2WP Vörueiginleikar
Hlutanúmer :
NGTD17R120F2WP
Framleiðandi :
ON Semiconductor
Lýsing :
DIODE GEN PURP 1.2KV DIE
Röð :
-
Hluti staða :
Active
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
1200V
Núverandi - meðaltal leiðrétt (Io) :
-
Spenna - Fram (Vf) (Max) @ Ef :
1.8V @ 35A
Hraði :
-
Afturheimtur bata (trr) :
-
Núverandi - Aftur leki @ Vr :
1µA @ 1200V
Capacitance @ Vr, F :
-
Festingargerð :
Surface Mount
Pakki / mál :
Die
Birgir tæki pakki :
Die
Rekstrarhiti - mótum :
175°C (Max)
Nýjustu fréttir
Þú gætir líka haft áhuga á
-
VS-HFA04SD60S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 4A TO252AA. Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED
-
SFA808G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AC. Rectifiers 35ns8A 600V Sp Fst Recov Rectifier
-
-
-
-
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