[2185stk lager]
- Hlutanúmer:
- RN1906FE(T5L,F,T)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Thyristors - SCR, Díóða - Zener - Stakur, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Díóða - Bríta leiðréttingar and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN1906FE(T5L,F,T) electronic components. RN1906FE(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1906FE(T5L,F,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1906FE(T5L,F,T) Vörueiginleikar
Hlutanúmer :
RN1906FE(T5L,F,T)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS 2NPN PREBIAS 0.1W ES6
Röð :
-
Hluti staða :
Obsolete
Transistor Type :
2 NPN - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
4.7 kOhms
Viðnám - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) :
100nA (ICBO)
Tíðni - umskipti :
250MHz
Afl - Max :
100mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-563, SOT-666
Birgir tæki pakki :
ES6
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