Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 800V 1A DO219AB
Spenna - DC snúningur (Vr) (Max) :
800V
Núverandi - meðaltal leiðrétt (Io) :
700mA
Spenna - Fram (Vf) (Max) @ Ef :
1.1V @ 1A
Hraði :
Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) :
1.8µs
Núverandi - Aftur leki @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
4pF @ 4V, 1MHz
Festingargerð :
Surface Mount
Birgir tæki pakki :
DO-219AB (SMF)
Rekstrarhiti - mótum :
-55°C ~ 150°C