Taiwan Semiconductor Corporation - ESH3B M6G

KEY Part #: K6458060

ESH3B M6G Verðlagning (USD) [838004stk lager]

  • 1 pcs$0.04414

Hlutanúmer:
ESH3B M6G
Framleiðandi:
Taiwan Semiconductor Corporation
Nákvæm lýsing:
DIODE GEN PURP 100V 3A DO214AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Single, Transistors - sérstök tilgangur, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - FETs, MOSFETs - RF ...
Samkeppnisforskot:
We specialize in Taiwan Semiconductor Corporation ESH3B M6G electronic components. ESH3B M6G can be shipped within 24 hours after order. If you have any demands for ESH3B M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3B M6G Vörueiginleikar

Hlutanúmer : ESH3B M6G
Framleiðandi : Taiwan Semiconductor Corporation
Lýsing : DIODE GEN PURP 100V 3A DO214AB
Röð : -
Hluti staða : Not For New Designs
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 3A
Spenna - Fram (Vf) (Max) @ Ef : 900mV @ 3A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 20ns
Núverandi - Aftur leki @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : DO-214AB, SMC
Birgir tæki pakki : DO-214AB (SMC)
Rekstrarhiti - mótum : -55°C ~ 175°C

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