VS-1EFH02HM3/I Verðlagning (USD) [792956stk lager]
- 1 pcs$0.04665
- 10,000 pcs$0.04227
- 30,000 pcs$0.03887
- Hlutanúmer:
- VS-1EFH02HM3/I
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - FETs, MOSFETs - Single, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-1EFH02HM3/I Vörueiginleikar
Hlutanúmer :
VS-1EFH02HM3/I
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 200V 1A DO219AB
Röð :
Automotive, AEC-Q101, FRED Pt®
Hluti staða :
Active
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
200V
Núverandi - meðaltal leiðrétt (Io) :
1A
Spenna - Fram (Vf) (Max) @ Ef :
930mV @ 1A
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
25ns
Núverandi - Aftur leki @ Vr :
2µA @ 200V
Capacitance @ Vr, F :
-
Festingargerð :
Surface Mount
Pakki / mál :
DO-219AB
Birgir tæki pakki :
DO-219AB (SMF)
Rekstrarhiti - mótum :
-55°C ~ 175°C
Nýjustu fréttir
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VS-1EFH02HM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
-
VS-2EFH02HM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 2A DO219AB. Rectifiers Hypfst Rct 2A 200V
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