[1485stk lager]
- Hlutanúmer:
- SI9424BDY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V 5.6A 8SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - stakir, Díóða - RF and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI9424BDY-T1-GE3 electronic components. SI9424BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI9424BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI9424BDY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI9424BDY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V 5.6A 8SOIC
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.6A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7.1A, 4.5V
Vgs (th) (Max) @ kt :
850mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
40nC @ 4.5V
Vgs (hámark) :
±9V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
1.25W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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