HGT1S10N120BNST Verðlagning (USD) [51869stk lager]
- 1 pcs$0.96859
- 800 pcs$0.96377
- 1,600 pcs$0.81282
- 2,400 pcs$0.77411
- Hlutanúmer:
- HGT1S10N120BNST
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- IGBT 1200V 35A 298W TO263AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - fylki, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor HGT1S10N120BNST electronic components. HGT1S10N120BNST can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNST Vörueiginleikar
Hlutanúmer :
HGT1S10N120BNST
Framleiðandi :
ON Semiconductor
Lýsing :
IGBT 1200V 35A 298W TO263AB
Röð :
-
Hluti staða :
Active
IGBT gerð :
NPT
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
35A
Núverandi - Safnari púlsaður (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Afl - Max :
298W
Skiptir um orku :
320µJ (on), 800µJ (off)
Gerð innsláttar :
Standard
Hliðargjald :
100nC
Td (kveikt / slökkt) @ 25 ° C :
23ns/165ns
Próf ástand :
960V, 10A, 10 Ohm, 15V
Afturheimtur bata (trr) :
-
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki :
TO-263AB
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