A2G35S200-01SR3 Verðlagning (USD) [756stk lager]
- 1 pcs$61.37230
- Hlutanúmer:
- A2G35S200-01SR3
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- AIRFAST RF POWER GAN TRANSISTOR.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Single, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. A2G35S200-01SR3 electronic components. A2G35S200-01SR3 can be shipped within 24 hours after order. If you have any demands for A2G35S200-01SR3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
A2G35S200-01SR3 Vörueiginleikar
Hlutanúmer :
A2G35S200-01SR3
Framleiðandi :
NXP USA Inc.
Lýsing :
AIRFAST RF POWER GAN TRANSISTOR
Röð :
-
Hluti staða :
Active
Transistor Type :
LDMOS
Tíðni :
3.4GHz ~ 3.6GHz
Aflaðu :
16.1dB
Spenna - Próf :
48V
Núverandi einkunn :
-
Hávaðamynd :
-
Núverandi - próf :
291mA
Kraftur - framleiðsla :
180W
Spenna - hlutfall :
125V
Pakki / mál :
NI-400S-2S
Birgir tæki pakki :
NI-400S-2S
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