[1939stk lager]
- Hlutanúmer:
- RN2906FE(TE85L,F)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS 2PNP PREBIAS 0.1W ES6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Díóða - Bríta leiðréttingar, Díóða - Zener - Stakur, Transistors - IGBTs - Arrays, Transistors - Forritanleg sameining, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN2906FE(TE85L,F) electronic components. RN2906FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2906FE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2906FE(TE85L,F) Vörueiginleikar
Hlutanúmer :
RN2906FE(TE85L,F)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS 2PNP PREBIAS 0.1W ES6
Röð :
-
Hluti staða :
Active
Transistor Type :
2 PNP - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
4.7 kOhms
Viðnám - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) :
100nA (ICBO)
Tíðni - umskipti :
200MHz
Afl - Max :
100mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-563, SOT-666
Birgir tæki pakki :
ES6
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