RN1114MFV,L3F Verðlagning (USD) [2968934stk lager]
- 1 pcs$0.01246
- Hlutanúmer:
- RN1114MFV,L3F
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- X34 PB-F VESM TRANSISTOR PD 150M.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Arrays, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - RF, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - sérstök tilgangur and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN1114MFV,L3F electronic components. RN1114MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1114MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1114MFV,L3F Vörueiginleikar
Hlutanúmer :
RN1114MFV,L3F
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
X34 PB-F VESM TRANSISTOR PD 150M
Röð :
-
Hluti staða :
Active
Transistor Type :
NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
1 kOhms
Viðnám - Emitter Base (R2) :
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
250MHz
Afl - Max :
150mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-723
Birgir tæki pakki :
VESM
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