SISF00DN-T1-GE3 Verðlagning (USD) [134082stk lager]
- 1 pcs$0.27586
- Hlutanúmer:
- SISF00DN-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET DUAL N-CH 30V POWERPAK 12.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR, Transistors - IGBTs - Arrays, Díóða - RF, Transistors - JFETs, Díóða - leiðréttingar - fylki and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SISF00DN-T1-GE3 electronic components. SISF00DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISF00DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISF00DN-T1-GE3 Vörueiginleikar
Hlutanúmer :
SISF00DN-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET DUAL N-CH 30V POWERPAK 12
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual) Common Drain
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
60A (Tc)
Rds On (Max) @ Id, Vgs :
5 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
53nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2700pF @ 15V
Afl - Max :
69.4W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® 1212-8SCD
Birgir tæki pakki :
PowerPAK® 1212-8SCD
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