Vishay Semiconductor Diodes Division - GPP60BHE3/73

KEY Part #: K6448041

GPP60BHE3/73 Verðlagning (USD) [1218stk lager]

  • 1,200 pcs$0.22425

Hlutanúmer:
GPP60BHE3/73
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 100V 6A P600.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Fylki, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCR and Transistors - FETs, MOSFETs - RF ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division GPP60BHE3/73 electronic components. GPP60BHE3/73 can be shipped within 24 hours after order. If you have any demands for GPP60BHE3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPP60BHE3/73 Vörueiginleikar

Hlutanúmer : GPP60BHE3/73
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 100V 6A P600
Röð : -
Hluti staða : Obsolete
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 6A
Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 6A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : 5.5µs
Núverandi - Aftur leki @ Vr : 5µA @ 100V
Capacitance @ Vr, F : -
Festingargerð : Through Hole
Pakki / mál : P600, Axial
Birgir tæki pakki : P600
Rekstrarhiti - mótum : -55°C ~ 175°C

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