[3760stk lager]
- Hlutanúmer:
- IRF7338PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N/P-CH 12V 6.3A/3A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Smára - tvíhverfa (BJT) - fylki, Transistors - JFETs, Transistors - Forritanleg sameining, Díóða - breytileg getu and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF7338PBF electronic components. IRF7338PBF can be shipped within 24 hours after order. If you have any demands for IRF7338PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7338PBF Vörueiginleikar
Hlutanúmer :
IRF7338PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N/P-CH 12V 6.3A/3A 8-SOIC
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.3A, 3A
Rds On (Max) @ Id, Vgs :
34 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
640pF @ 9V
Afl - Max :
2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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