Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 900V TO220SIS
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
900V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.3 Ohm @ 4.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 900µA
Hliðargjald (Qg) (Max) @ Vgs :
46nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
2000pF @ 25V
Dreifing orku (Max) :
50W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220SIS
Pakki / mál :
TO-220-3 Full Pack