FD-DF80R12W1H3_B52 Verðlagning (USD) [2473stk lager]
- 1 pcs$17.50946
- Hlutanúmer:
- FD-DF80R12W1H3_B52
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- IGBT MODULE VCES 1200V 40A.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs, Transistors - JFETs, Thyristors - SCR, Transistors - FETs, MOSFETs - Arrays and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies FD-DF80R12W1H3_B52 electronic components. FD-DF80R12W1H3_B52 can be shipped within 24 hours after order. If you have any demands for FD-DF80R12W1H3_B52, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FD-DF80R12W1H3_B52 Vörueiginleikar
Hlutanúmer :
FD-DF80R12W1H3_B52
Framleiðandi :
Infineon Technologies
Lýsing :
IGBT MODULE VCES 1200V 40A
Röð :
-
Hluti staða :
Active
IGBT gerð :
Trench Field Stop
Stillingar :
Single
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
40A
Afl - Max :
215W
Vce (on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Núverandi - Úrskurður safnara (Max) :
1mA
Inntaksrýmd (Cies) @ Vce :
235nF @ 25V
Inntak :
Standard
NTC Thermistor :
Yes
Vinnuhitastig :
-40°C ~ 125°C
Festingargerð :
Chassis Mount
Pakki / mál :
Module
Birgir tæki pakki :
Module
Nýjustu fréttir
Þú gætir líka haft áhuga á
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VS-GB75NA60UF
Vishay Semiconductor Diodes Division
IGBT 600V 70A HS CHOPPER SOT-227. Rectifiers Output & SW Modules SOT-227 IGBT
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