EGF1BHE3_A/H Verðlagning (USD) [460696stk lager]
- 1 pcs$0.08029
- Hlutanúmer:
- EGF1BHE3_A/H
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE GEN PURP 100V 1A DO214BA. Rectifiers 1A,100V,50NS AEC-Q101 Qualified
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Kerfisstjóratæki, Díóða - breytileg getu, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division EGF1BHE3_A/H electronic components. EGF1BHE3_A/H can be shipped within 24 hours after order. If you have any demands for EGF1BHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1BHE3_A/H Vörueiginleikar
Hlutanúmer :
EGF1BHE3_A/H
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 100V 1A DO214BA
Röð :
Automotive, AEC-Q101, Superectifier®
Hluti staða :
Active
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
100V
Núverandi - meðaltal leiðrétt (Io) :
1A
Spenna - Fram (Vf) (Max) @ Ef :
1V @ 1A
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
50ns
Núverandi - Aftur leki @ Vr :
1µA @ 100V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Festingargerð :
Surface Mount
Pakki / mál :
DO-214BA
Birgir tæki pakki :
DO-214BA (GF1)
Rekstrarhiti - mótum :
-65°C ~ 175°C
Nýjustu fréttir
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DIODE GEN PURP 300V 2A DO214AA. Rectifiers 2A,300V,35ns, SMB F.EFF.SM DIODE
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DIODE GEN PURP 150V 2A DO214AA. Rectifiers 2A,100V,20ns SMB, UF Rect, SMD
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