Toshiba Semiconductor and Storage - MT3S111P(TE12L,F)

KEY Part #: K6462978

MT3S111P(TE12L,F) Verðlagning (USD) [244499stk lager]

  • 1 pcs$0.15128

Hlutanúmer:
MT3S111P(TE12L,F)
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
RF TRANS NPN 6V 8GHZ PW-MINI.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki, Kerfisstjóratæki, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - leiðréttingar - fylki, Thyristors - SCR and Transistors - sérstök tilgangur ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT3S111P(TE12L,F) Vörueiginleikar

Hlutanúmer : MT3S111P(TE12L,F)
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : RF TRANS NPN 6V 8GHZ PW-MINI
Röð : -
Hluti staða : Active
Transistor Type : NPN
Spenna - sundurliðun útsendara (hámark) : 6V
Tíðni - umskipti : 8GHz
Hávaðamynd (dB Typ @ f) : 1.25dB @ 1GHz
Aflaðu : 10.5dB
Afl - Max : 1W
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Núverandi - Safnari (Ic) (Max) : 100mA
Vinnuhitastig : 150°C (TJ)
Festingargerð : Surface Mount
Pakki / mál : TO-243AA
Birgir tæki pakki : PW-MINI

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