MT3S111P(TE12L,F) Verðlagning (USD) [244499stk lager]
- 1 pcs$0.15128
- Hlutanúmer:
- MT3S111P(TE12L,F)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- RF TRANS NPN 6V 8GHZ PW-MINI.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Single and Transistors - IGBTs - Single ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT3S111P(TE12L,F) Vörueiginleikar
Hlutanúmer :
MT3S111P(TE12L,F)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
RF TRANS NPN 6V 8GHZ PW-MINI
Röð :
-
Hluti staða :
Active
Transistor Type :
NPN
Spenna - sundurliðun útsendara (hámark) :
6V
Tíðni - umskipti :
8GHz
Hávaðamynd (dB Typ @ f) :
1.25dB @ 1GHz
Aflaðu :
10.5dB
Afl - Max :
1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Núverandi - Safnari (Ic) (Max) :
100mA
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-243AA
Birgir tæki pakki :
PW-MINI
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