Vishay Semiconductor Diodes Division - BYWB29-200HE3/81

KEY Part #: K6456349

BYWB29-200HE3/81 Verðlagning (USD) [104538stk lager]

  • 1 pcs$0.37403
  • 800 pcs$0.33139

Hlutanúmer:
BYWB29-200HE3/81
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 200V 8A TO263AB. Rectifiers 200 Volt 8.0A 25ns Single Glass Pass
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - fylki, Díóða - RF, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
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We specialize in Vishay Semiconductor Diodes Division BYWB29-200HE3/81 electronic components. BYWB29-200HE3/81 can be shipped within 24 hours after order. If you have any demands for BYWB29-200HE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYWB29-200HE3/81 Vörueiginleikar

Hlutanúmer : BYWB29-200HE3/81
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 200V 8A TO263AB
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 200V
Núverandi - meðaltal leiðrétt (Io) : 8A
Spenna - Fram (Vf) (Max) @ Ef : 1.3V @ 20A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 25ns
Núverandi - Aftur leki @ Vr : 10µA @ 200V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB
Rekstrarhiti - mótum : -65°C ~ 150°C

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