1N5809US Verðlagning (USD) [8275stk lager]
- 1 pcs$4.97550
- 10 pcs$4.47707
- 25 pcs$4.07894
- 100 pcs$3.68108
- 250 pcs$3.38260
- 500 pcs$3.08413
- Hlutanúmer:
- 1N5809US
- Framleiðandi:
- Microsemi Corporation
- Nákvæm lýsing:
- DIODE GEN PURP 100V 3A B-MELF. Rectifiers Rectifier
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur, Thyristors - SCRs - mát, Díóða - Bríta leiðréttingar, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Microsemi Corporation 1N5809US electronic components. 1N5809US can be shipped within 24 hours after order. If you have any demands for 1N5809US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5809US Vörueiginleikar
Hlutanúmer :
1N5809US
Framleiðandi :
Microsemi Corporation
Lýsing :
DIODE GEN PURP 100V 3A B-MELF
Röð :
-
Hluti staða :
Active
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
100V
Núverandi - meðaltal leiðrétt (Io) :
3A
Spenna - Fram (Vf) (Max) @ Ef :
875mV @ 4A
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
30ns
Núverandi - Aftur leki @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
60pF @ 10V, 1MHz
Festingargerð :
Surface Mount
Pakki / mál :
SQ-MELF, B
Birgir tæki pakki :
B, SQ-MELF
Rekstrarhiti - mótum :
-65°C ~ 175°C
Nýjustu fréttir
Þú gætir líka haft áhuga á
-
NRVTSA4100T3G
ON Semiconductor
DIODE SCHOTTKY 4A 100V SMA-2. Schottky Diodes & Rectifiers AUTO STANDARD OF NTS
-
NRVBS360BT3G
ON Semiconductor
DIODE SCHOTTKY 60V 4A SMB. Schottky Diodes & Rectifiers 3A 60V SCHOTTKY SMB
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