Microsemi Corporation - 1N5809US

KEY Part #: K6426619

1N5809US Verðlagning (USD) [8275stk lager]

  • 1 pcs$4.97550
  • 10 pcs$4.47707
  • 25 pcs$4.07894
  • 100 pcs$3.68108
  • 250 pcs$3.38260
  • 500 pcs$3.08413

Hlutanúmer:
1N5809US
Framleiðandi:
Microsemi Corporation
Nákvæm lýsing:
DIODE GEN PURP 100V 3A B-MELF. Rectifiers Rectifier
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Díóða - breytileg getu, Transistors - IGBTs - Single and Transistors - IGBTs - mát ...
Samkeppnisforskot:
We specialize in Microsemi Corporation 1N5809US electronic components. 1N5809US can be shipped within 24 hours after order. If you have any demands for 1N5809US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5809US Vörueiginleikar

Hlutanúmer : 1N5809US
Framleiðandi : Microsemi Corporation
Lýsing : DIODE GEN PURP 100V 3A B-MELF
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 3A
Spenna - Fram (Vf) (Max) @ Ef : 875mV @ 4A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 30ns
Núverandi - Aftur leki @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : SQ-MELF, B
Birgir tæki pakki : B, SQ-MELF
Rekstrarhiti - mótum : -65°C ~ 175°C

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