Vishay Semiconductor Diodes Division - BY229-800HE3/45

KEY Part #: K6445957

[1931stk lager]


    Hlutanúmer:
    BY229-800HE3/45
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 800V 8A TO220AC.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Kerfisstjóratæki and Smára - tvíhverfa (BJT) - fylki ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division BY229-800HE3/45 electronic components. BY229-800HE3/45 can be shipped within 24 hours after order. If you have any demands for BY229-800HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BY229-800HE3/45 Vörueiginleikar

    Hlutanúmer : BY229-800HE3/45
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 800V 8A TO220AC
    Röð : -
    Hluti staða : Obsolete
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 800V
    Núverandi - meðaltal leiðrétt (Io) : 8A
    Spenna - Fram (Vf) (Max) @ Ef : 1.85V @ 20A
    Hraði : Fast Recovery =< 500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 145ns
    Núverandi - Aftur leki @ Vr : 10µA @ 800V
    Capacitance @ Vr, F : -
    Festingargerð : Through Hole
    Pakki / mál : TO-220-2
    Birgir tæki pakki : TO-220AC
    Rekstrarhiti - mótum : -40°C ~ 150°C

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