Infineon Technologies - IPP80N06S2L09AKSA2

KEY Part #: K6419254

IPP80N06S2L09AKSA2 Verðlagning (USD) [99902stk lager]

  • 1 pcs$0.39139
  • 500 pcs$0.32064

Hlutanúmer:
IPP80N06S2L09AKSA2
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 55V 80A TO220-3.
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCRs - mát, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Thyristors - TRIACs and Díóða - leiðréttingar - stakir ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP80N06S2L09AKSA2 Vörueiginleikar

Hlutanúmer : IPP80N06S2L09AKSA2
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 55V 80A TO220-3
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 52A, 10V
Vgs (th) (Max) @ kt : 2V @ 125µA
Hliðargjald (Qg) (Max) @ Vgs : 105nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 2620pF @ 25V
FET lögun : -
Dreifing orku (Max) : 190W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : PG-TO220-3-1
Pakki / mál : TO-220-3