Taiwan Semiconductor Corporation - TPMR6J S1G

KEY Part #: K6452814

TPMR6J S1G Verðlagning (USD) [414875stk lager]

  • 1 pcs$0.08915

Hlutanúmer:
TPMR6J S1G
Framleiðandi:
Taiwan Semiconductor Corporation
Nákvæm lýsing:
DIODE GEN PURP 600V 6A TO277A. Rectifiers 35ns, 6A, 600V, Superfast Recovery Rectifier
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Díóða - leiðréttingar - stakir, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Bríta leiðréttingar and Díóða - leiðréttingar - fylki ...
Samkeppnisforskot:
We specialize in Taiwan Semiconductor Corporation TPMR6J S1G electronic components. TPMR6J S1G can be shipped within 24 hours after order. If you have any demands for TPMR6J S1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPMR6J S1G Vörueiginleikar

Hlutanúmer : TPMR6J S1G
Framleiðandi : Taiwan Semiconductor Corporation
Lýsing : DIODE GEN PURP 600V 6A TO277A
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 600V
Núverandi - meðaltal leiðrétt (Io) : 6A
Spenna - Fram (Vf) (Max) @ Ef : 1.8V @ 6A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 40ns
Núverandi - Aftur leki @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 60pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : TO-277, 3-PowerDFN
Birgir tæki pakki : TO-277A (SMPC)
Rekstrarhiti - mótum : -55°C ~ 175°C

Þú gætir líka haft áhuga á
  • RRE04EA4DTR

    Rohm Semiconductor

    DIODE GEN PURP 400V 400MA TSMD5. Rectifiers Rectifier Diodes

  • BAS70E6327HTSA1

    Infineon Technologies

    DIODE SCHOTTKY 70V 70MA SOT23-3. Schottky Diodes & Rectifiers 70V 0.07A

  • MMBD1401A

    ON Semiconductor

    DIODE GEN PURP 175V 200MA SOT23. Diodes - General Purpose, Power, Switching Small Signal Diode

  • BAS21-TP

    Micro Commercial Co

    DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching 200mA 250V

  • VS-15EWX06FNTR-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 15A DPAK. Rectifiers Hyperfast 15A 600V 18ns

  • VS-4EWH02FNTR-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 4A D-PAK. Rectifiers Hyperfast 4A 200V 23ns