UH10JT-E3/4W Verðlagning (USD) [2061stk lager]
- 1,000 pcs$0.27408
- Hlutanúmer:
- UH10JT-E3/4W
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE GEN PURP 600V 10A TO220AC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Single and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division UH10JT-E3/4W electronic components. UH10JT-E3/4W can be shipped within 24 hours after order. If you have any demands for UH10JT-E3/4W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UH10JT-E3/4W Vörueiginleikar
Hlutanúmer :
UH10JT-E3/4W
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 600V 10A TO220AC
Röð :
-
Hluti staða :
Obsolete
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
600V
Núverandi - meðaltal leiðrétt (Io) :
10A
Spenna - Fram (Vf) (Max) @ Ef :
-
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
25ns
Núverandi - Aftur leki @ Vr :
-
Capacitance @ Vr, F :
-
Festingargerð :
Through Hole
Pakki / mál :
TO-220-2
Birgir tæki pakki :
TO-220AC
Rekstrarhiti - mótum :
-55°C ~ 175°C
Nýjustu fréttir
Þú gætir líka haft áhuga á
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IDB15E60
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
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