TK35E08N1,S1X Verðlagning (USD) [110596stk lager]
- 1 pcs$0.39086
- 50 pcs$0.38892
- Hlutanúmer:
- TK35E08N1,S1X
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 80V 55A TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Díóða - RF, Díóða - Zener - Fylki, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Arrays, Díóða - Bríta leiðréttingar and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK35E08N1,S1X electronic components. TK35E08N1,S1X can be shipped within 24 hours after order. If you have any demands for TK35E08N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35E08N1,S1X Vörueiginleikar
Hlutanúmer :
TK35E08N1,S1X
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 80V 55A TO-220
Röð :
U-MOSVIII-H
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
55A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
12.2 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 300µA
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1700pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
72W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220
Pakki / mál :
TO-220-3
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