Vishay Semiconductor Diodes Division - UH3B-M3/9AT

KEY Part #: K6443276

UH3B-M3/9AT Verðlagning (USD) [2847stk lager]

  • 7,000 pcs$0.08376

Hlutanúmer:
UH3B-M3/9AT
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 100V 2.5A DO214AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Thyristors - SCR, Thyristors - TRIACs, Díóða - Bríta leiðréttingar, Díóða - Zener - Fylki, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Díóða - Zener - Stakur ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division UH3B-M3/9AT electronic components. UH3B-M3/9AT can be shipped within 24 hours after order. If you have any demands for UH3B-M3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH3B-M3/9AT Vörueiginleikar

Hlutanúmer : UH3B-M3/9AT
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 100V 2.5A DO214AB
Röð : -
Hluti staða : Obsolete
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 2.5A
Spenna - Fram (Vf) (Max) @ Ef : 1.05V @ 3A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 40ns
Núverandi - Aftur leki @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 42pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : DO-214AB, SMC
Birgir tæki pakki : DO-214AB (SMC)
Rekstrarhiti - mótum : -55°C ~ 175°C

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