Infineon Technologies - IPB120N04S401ATMA1

KEY Part #: K6399795

IPB120N04S401ATMA1 Verðlagning (USD) [71783stk lager]

  • 1 pcs$0.54470
  • 1,000 pcs$0.49968

Hlutanúmer:
IPB120N04S401ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 40V 120A TO263-3-2.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - Single, Díóða - RF, Transistors - Tvíhverfur (BJT) - RF and Díóða - Zener - Stakur ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N04S401ATMA1 Vörueiginleikar

Hlutanúmer : IPB120N04S401ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 40V 120A TO263-3-2
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 120A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 4V @ 140µA
Hliðargjald (Qg) (Max) @ Vgs : 176nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 14000pF @ 25V
FET lögun : -
Dreifing orku (Max) : 188W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263AB)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB