SI3430DV-T1-E3 Verðlagning (USD) [195156stk lager]
- 1 pcs$0.18953
- 3,000 pcs$0.16019
- Hlutanúmer:
- SI3430DV-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 1.8A 6-TSOP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Forritanleg sameining, Smára - tvíhverfa (BJT) - fylki, Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Díóða - Zener - Stakur and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI3430DV-T1-E3 electronic components. SI3430DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3430DV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3430DV-T1-E3 Vörueiginleikar
Hlutanúmer :
SI3430DV-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 1.8A 6-TSOP
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.8A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA (Min)
Hliðargjald (Qg) (Max) @ Vgs :
6.6nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
1.14W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-TSOP
Pakki / mál :
SOT-23-6 Thin, TSOT-23-6
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