NSB8JTHE3_A/P Verðlagning (USD) [128710stk lager]
- 1 pcs$0.28737
- 1,000 pcs$0.26162
- Hlutanúmer:
- NSB8JTHE3_A/P
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Thyristors - SCR, Díóða - leiðréttingar - fylki, Transistors - sérstök tilgangur and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/P electronic components. NSB8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/P Vörueiginleikar
Hlutanúmer :
NSB8JTHE3_A/P
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 600V 8A TO263AB
Röð :
Automotive, AEC-Q101
Hluti staða :
Active
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
600V
Núverandi - meðaltal leiðrétt (Io) :
8A
Spenna - Fram (Vf) (Max) @ Ef :
1.1V @ 8A
Hraði :
Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) :
-
Núverandi - Aftur leki @ Vr :
10µA @ 600V
Capacitance @ Vr, F :
55pF @ 4V, 1MHz
Festingargerð :
Surface Mount
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki :
TO-263AB
Rekstrarhiti - mótum :
-55°C ~ 150°C
Nýjustu fréttir
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