ES1BHE3_A/I Verðlagning (USD) [808309stk lager]
- 1 pcs$0.04576
- Hlutanúmer:
- ES1BHE3_A/I
- Framleiðandi:
- Vishay Semiconductor Diodes Division
- Nákvæm lýsing:
- DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1.0 Amp 100 Volt 30 Amp IFSM
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - TRIACs, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Semiconductor Diodes Division ES1BHE3_A/I electronic components. ES1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES1BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES1BHE3_A/I Vörueiginleikar
Hlutanúmer :
ES1BHE3_A/I
Framleiðandi :
Vishay Semiconductor Diodes Division
Lýsing :
DIODE GEN PURP 100V 1A DO214AC
Röð :
Automotive, AEC-Q101
Hluti staða :
Active
Díóða gerð :
Standard
Spenna - DC snúningur (Vr) (Max) :
100V
Núverandi - meðaltal leiðrétt (Io) :
1A
Spenna - Fram (Vf) (Max) @ Ef :
920mV @ 1A
Hraði :
Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) :
25ns
Núverandi - Aftur leki @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Festingargerð :
Surface Mount
Pakki / mál :
DO-214AC, SMA
Birgir tæki pakki :
DO-214AC (SMA)
Rekstrarhiti - mótum :
-55°C ~ 150°C
Nýjustu fréttir
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