DDTD113EC-7-F Verðlagning (USD) [1557132stk lager]
- 1 pcs$0.02375
- 3,000 pcs$0.02201
- 6,000 pcs$0.01914
- 15,000 pcs$0.01627
- 30,000 pcs$0.01531
- 75,000 pcs$0.01436
- 150,000 pcs$0.01244
- Hlutanúmer:
- DDTD113EC-7-F
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- TRANS PREBIAS NPN 200MW SOT23-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Thyristors - TRIACs, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Single, Thyristors - SCRs - mát and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DDTD113EC-7-F electronic components. DDTD113EC-7-F can be shipped within 24 hours after order. If you have any demands for DDTD113EC-7-F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DDTD113EC-7-F Vörueiginleikar
Hlutanúmer :
DDTD113EC-7-F
Framleiðandi :
Diodes Incorporated
Lýsing :
TRANS PREBIAS NPN 200MW SOT23-3
Röð :
-
Hluti staða :
Active
Transistor Type :
NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) :
500mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
1 kOhms
Viðnám - Emitter Base (R2) :
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
200MHz
Afl - Max :
200mW
Festingargerð :
Surface Mount
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
Birgir tæki pakki :
SOT-23-3
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