Taiwan Semiconductor Corporation - 1N5401GHB0G

KEY Part #: K6431188

1N5401GHB0G Verðlagning (USD) [1257008stk lager]

  • 1 pcs$0.02943

Hlutanúmer:
1N5401GHB0G
Framleiðandi:
Taiwan Semiconductor Corporation
Nákvæm lýsing:
DIODE GEN PURP 100V 3A DO201AD.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur, Transistors - Forritanleg sameining, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki and Díóða - RF ...
Samkeppnisforskot:
We specialize in Taiwan Semiconductor Corporation 1N5401GHB0G electronic components. 1N5401GHB0G can be shipped within 24 hours after order. If you have any demands for 1N5401GHB0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5401GHB0G Vörueiginleikar

Hlutanúmer : 1N5401GHB0G
Framleiðandi : Taiwan Semiconductor Corporation
Lýsing : DIODE GEN PURP 100V 3A DO201AD
Röð : Automotive, AEC-Q101
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 100V
Núverandi - meðaltal leiðrétt (Io) : 3A
Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 3A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : -
Núverandi - Aftur leki @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 25pF @ 4V, 1MHz
Festingargerð : Through Hole
Pakki / mál : DO-201AD, Axial
Birgir tæki pakki : DO-201AD
Rekstrarhiti - mótum : -55°C ~ 150°C

Þú gætir líka haft áhuga á
  • SS1FN6HM3/I

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 60V 1A DO219AB. Schottky Diodes & Rectifiers 1A,60V,SMFSkty Rect AEC-Q101 Qualified

  • VS-15ETH03SPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 15A TO263AB.

  • AR4PJ-M3/86A

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 600V 2A TO277A. Rectifiers 4A 600V

  • V10P12HM3_A/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 120V 10A TO277A. Schottky Diodes & Rectifiers 10A, 120V, SMPC, TRENCH SKY RECT.

  • AS4PDHM3_A/H

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 200V 2.4A TO277A. Rectifiers 4A,200V, SMPC STD, Avalanche SM

  • AS3PMHM3_A/I

    Vishay Semiconductor Diodes Division

    DIODE AVALANCH 1KV 2.1A TO277A. Rectifiers 3A,1000V, SMPC,STD, Avalanche SM