RN1106MFV,L3F Verðlagning (USD) [3519812stk lager]
- 1 pcs$0.01056
- 8,000 pcs$0.01051
- 16,000 pcs$0.00914
- 24,000 pcs$0.00822
- 56,000 pcs$0.00731
- 200,000 pcs$0.00609
- Hlutanúmer:
- RN1106MFV,L3F
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS PREBIAS NPN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - JFETs, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Díóða - breytileg getu, Transistors - IGBTs - Single, Transistors - IGBTs - mát and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN1106MFV,L3F electronic components. RN1106MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1106MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1106MFV,L3F Vörueiginleikar
Hlutanúmer :
RN1106MFV,L3F
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS PREBIAS NPN
Röð :
-
Hluti staða :
Active
Transistor Type :
NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
4.7 kOhms
Viðnám - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
-
Afl - Max :
150mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-723
Birgir tæki pakki :
VESM
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