SI2399DS-T1-GE3 Verðlagning (USD) [471021stk lager]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Hlutanúmer:
- SI2399DS-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V 6A SOT-23.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - RF, Díóða - Bríta leiðréttingar, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Arrays and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI2399DS-T1-GE3 electronic components. SI2399DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2399DS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2399DS-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI2399DS-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V 6A SOT-23
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
34 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 4.5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
835pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.25W (Ta), 2.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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