Vishay Semiconductor Diodes Division - RGF1KHE3/67A

KEY Part #: K6446295

[1814stk lager]


    Hlutanúmer:
    RGF1KHE3/67A
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 800V 1A DO214BA.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF, Transistors - Forritanleg sameining, Thyristors - SCR, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - RF and Transistors - IGBTs - Arrays ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division RGF1KHE3/67A electronic components. RGF1KHE3/67A can be shipped within 24 hours after order. If you have any demands for RGF1KHE3/67A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RGF1KHE3/67A Vörueiginleikar

    Hlutanúmer : RGF1KHE3/67A
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 800V 1A DO214BA
    Röð : SUPERECTIFIER®
    Hluti staða : Discontinued at Digi-Key
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 800V
    Núverandi - meðaltal leiðrétt (Io) : 1A
    Spenna - Fram (Vf) (Max) @ Ef : 1.3V @ 1A
    Hraði : Fast Recovery =< 500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 500ns
    Núverandi - Aftur leki @ Vr : 5µA @ 800V
    Capacitance @ Vr, F : 8.5pF @ 4V, 1MHz
    Festingargerð : Surface Mount
    Pakki / mál : DO-214BA
    Birgir tæki pakki : DO-214BA (GF1)
    Rekstrarhiti - mótum : -65°C ~ 175°C

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