[2465stk lager]
- Hlutanúmer:
- PMPB12UN,115
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 20V 7.9A 6DFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCR, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCRs - mát, Transistors - Forritanleg sameining and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PMPB12UN,115 electronic components. PMPB12UN,115 can be shipped within 24 hours after order. If you have any demands for PMPB12UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB12UN,115 Vörueiginleikar
Hlutanúmer :
PMPB12UN,115
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 20V 7.9A 6DFN
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7.9A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 7.9A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
13nC @ 4.5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
886pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.7W (Ta), 12.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-DFN2020MD (2x2)
Pakki / mál :
6-UDFN Exposed Pad
Nýjustu fréttir
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