Infineon Technologies - IPI80N06S3L-08

KEY Part #: K6409842

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    Hlutanúmer:
    IPI80N06S3L-08
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 55V 80A TO-262.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    Flís frá:
    Hong Kong
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    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Díóða - breytileg getu, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs and Kerfisstjóratæki ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies IPI80N06S3L-08 electronic components. IPI80N06S3L-08 can be shipped within 24 hours after order. If you have any demands for IPI80N06S3L-08, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPI80N06S3L-08 Vörueiginleikar

    Hlutanúmer : IPI80N06S3L-08
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 55V 80A TO-262
    Röð : OptiMOS™
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 55V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 5V, 10V
    Rds On (Max) @ Id, Vgs : 7.9 mOhm @ 43A, 10V
    Vgs (th) (Max) @ kt : 2.2V @ 55µA
    Hliðargjald (Qg) (Max) @ Vgs : 134nC @ 10V
    Vgs (hámark) : ±16V
    Inntaksrýmd (Ciss) (Max) @ Vds : 6475pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 105W (Tc)
    Vinnuhitastig : -55°C ~ 175°C (TJ)
    Festingargerð : Through Hole
    Birgir tæki pakki : PG-TO262-3
    Pakki / mál : TO-262-3 Long Leads, I²Pak, TO-262AA

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