[1506stk lager]
- Hlutanúmer:
- SUP60N10-18P-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 60A TO220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - mát, Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Tvíhverfur (BJT) - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SUP60N10-18P-E3 electronic components. SUP60N10-18P-E3 can be shipped within 24 hours after order. If you have any demands for SUP60N10-18P-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUP60N10-18P-E3 Vörueiginleikar
Hlutanúmer :
SUP60N10-18P-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 60A TO220AB
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
60A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, Vgs :
18.3 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2600pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
3.75W (Ta), 150W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
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