BSZ0910NDXTMA1 Verðlagning (USD) [171885stk lager]
- 1 pcs$0.21519
- Hlutanúmer:
- BSZ0910NDXTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- DIFFERENTIATED MOSFETS.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - SCR, Transistors - IGBTs - mát, Thyristors - SCRs - mát, Transistors - Forritanleg sameining and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSZ0910NDXTMA1 electronic components. BSZ0910NDXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0910NDXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0910NDXTMA1 Vörueiginleikar
Hlutanúmer :
BSZ0910NDXTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
DIFFERENTIATED MOSFETS
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate, 4.5V Drive
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
800pF @ 15V
Afl - Max :
1.9W (Ta), 31W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
PG-WISON-8
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