Vishay Semiconductor Diodes Division - BYM11-800HE3/97

KEY Part #: K6447682

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    Hlutanúmer:
    BYM11-800HE3/97
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 800V 1A DO213AB.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCRs - mát, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - RF and Díóða - leiðréttingar - fylki ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division BYM11-800HE3/97 electronic components. BYM11-800HE3/97 can be shipped within 24 hours after order. If you have any demands for BYM11-800HE3/97, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BYM11-800HE3/97 Vörueiginleikar

    Hlutanúmer : BYM11-800HE3/97
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 800V 1A DO213AB
    Röð : SUPERECTIFIER®
    Hluti staða : Discontinued at Digi-Key
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 800V
    Núverandi - meðaltal leiðrétt (Io) : 1A
    Spenna - Fram (Vf) (Max) @ Ef : 1.3V @ 1A
    Hraði : Fast Recovery =< 500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 500ns
    Núverandi - Aftur leki @ Vr : 5µA @ 800V
    Capacitance @ Vr, F : 15pF @ 4V, 1MHz
    Festingargerð : Surface Mount
    Pakki / mál : DO-213AB, MELF (Glass)
    Birgir tæki pakki : DO-213AB
    Rekstrarhiti - mótum : -65°C ~ 175°C

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