[127stk lager]
- Hlutanúmer:
- IPB10N03LB G
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 50A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Thyristors - SCRs - mát, Thyristors - DIACs, SIDACs, Díóða - RF, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB10N03LB G electronic components. IPB10N03LB G can be shipped within 24 hours after order. If you have any demands for IPB10N03LB G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB10N03LB G Vörueiginleikar
Hlutanúmer :
IPB10N03LB G
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 50A D2PAK
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
50A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
2V @ 20µA
Hliðargjald (Qg) (Max) @ Vgs :
13nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1639pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
58W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-3
Pakki / mál :
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Nýjustu fréttir
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